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| DSEC 60-04A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery Preliminary Data VRSM V 400 VRRM V 400 DSEC 60-04A A C A IFAV = 2x 30 A VRRM = 400 V trr = 30 ns TO-247 AD Type A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 140C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = tbd A; L = tbd H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 tbd tbd tbd -55...+175 175 -55...+150 A A A mJ A C C C W Nm g Applications q Features q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 165 0.8...1.2 6 q q q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 30 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 250 1 1.09 1.49 0.9 0.25 mA mA V V K/W K/W ns 6.8 A q VF y RthJC RthCH trr IRM q q q Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms TVJ = 100C 30 5.5 Advantages q q q Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see outlines.pdf (c) 2000 IXYS All rights reserved 1-2 008 IXYS reserves the right to change limits, test conditions and dimensions. DSEC 60-04A 70 A 60 IF 50 40 30 20 10 0 0.0 1600 nC 1200 TVJ= 100C VR = 200V IRM 50 A 40 TVJ= 100C VR = 200V TVJ=150C TVJ=100C TVJ= 25C Qr 800 IF= 60A IF= 30A IF= 15A 30 20 IF= 60A IF= 30A IF= 15A 400 10 0.5 1.0 1.5 V 2.0 VF 0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns Fig. 3 Peak reverse current IRM versus -diF/dt 15 V VFR 0.6 2.0 TVJ= 100C VR = 200V TVJ= 100C IF = 30A tfr s tfr 0.4 1.5 Kf 1.0 trr 80 IF= 60A IF= 30A IF= 15A 70 10 V FR I RM 5 0.5 60 0.2 Qr 0.0 0 40 80 120 C 160 TVJ 50 0 200 400 600 -diF/dt 800 A/ms 1000 0 0 200 400 0.0 600 A/ms 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.0052 0.0003 0.0396 0.1 ZthJC 0.01 0.001 0.00001 DSEP 30-04A / DSEC 60-04A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case 008 NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 |
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